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Oral presentation

Strain-induced reaction kinetics of O$$_{2}$$ molecule at SiO$$_{2}$$/Si interfaces studied by real-time X-ray photoelectron spectroscopy

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Takakuwa, Yuji*

no journal, , 

The reaction kinetics of O$$_{2}$$ molecule at SiO$$_{2}$$/Si interfaces were investigated as a function of O$$_{2}$$ pressure (PO$$_{2}$$) by real-time X-ray photoelectron spectroscopy at BL23SU, SPring-8, to monitor the interfacial oxide growth rate (Rint), the oxidation states (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$ and Si$$^{4+}$$, and the magnitude of oxidation-induced strain (Si$$^{alpha}$$ and Si$$^{beta}$$) at the same time during oxidation. When increasing PO$$_{2}$$ after the surface oxidation, Rint showed a nonlinear power-low function of (PO$$_{2}$$)$$^{n}$$, where n was almost the same as 0.5 for both Si(111) and Si(001) substrates. The results are interpreted by a Si oxidation model, in which the defect generated by the oxidation-induced strain is an active site for dissociative adsorption of O$$_{2}$$ at SiO$$_{2}$$/Si interface. Furthermore, when increasing PO$$_{2}$$ during the surface oxidation, Si$$^{alpha}$$ and Si$$^{beta}$$ showed significant changes at the start of interfacial oxidation.

Oral presentation

Synchrotron radiation photoemission study of oxides at Ge(100) surface after atmospheric exposure

Yoshigoe, Akitaka; Okada, Ryuta*; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has attracted considerable attention as an alternative channel material in future field-effect transistors (FETs). In order to improve the performance of the FETs, an atomically understanding of oxides formed at Ge crystalline surfaces has been required. In this presentation, we show our results of synchrotron radiation photoemission analysis of oxides formed on a Ge(100)2$$times$$1 surface after atmospheric exposure at room temperature. High resolution Ge 3d photoelectron spectra clearly showed Ge$$^{4+}$$ oxidation state revealing GeO$$_{2}$$ formation over 10 hours exposure. Furthermore, we found the increment of Ge$$^{4+}$$ component after exposure of three months. These results are strong contrast to those of the oxidation using O$$_{2}$$ backfilling condition based on the ultra-high vacuum environment, implying the effects due to O$$_{2}$$ pressure gap or moisture existing in the atmosphere.

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